| Product Attribute | Attribute Value |
|---|---|
| Part Number | MBRT300100 |
| Manufacturer | GeneSiC Semiconductor |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 150 A |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Technology | Schottky |
| Supplier Device Package | Three Tower |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package / Case | Three Tower |
| Package | Bulk |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
| Current - Average Rectified (Io) (per Diode) | 150A |
onsemi
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
onsemi
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
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