| Product Attribute | Attribute Value |
|---|---|
| Part Number | MBR40030CT |
| Manufacturer | GeneSiC Semiconductor |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 200 A |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Technology | Schottky |
| Supplier Device Package | Twin Tower |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package / Case | Twin Tower |
| Package | Bulk |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Reverse Leakage @ Vr | 5 mA @ 20 V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Base Product Number | MBR40030 |
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
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