| Product Attribute | Attribute Value |
|---|---|
| Part Number | APT6030BN |
| Manufacturer | Microsemi |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247AD |
| Series | POWER MOS IV® |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 11.5A, 10V |
| Power Dissipation (Max) | 360W (Tc) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Microchip Technology
Microchip Technology
Microchip Technology
Microsemi Corporation
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microsemi Corporation
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
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